transistor (npn) features z for high-frequency amplificati on complementary to 2sa1532 z optimum for rf amplification of fm/am radios z high transition frequency f t maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 5 v i c collector current -continuous 30 ma p c collector power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c = 100 a, i b =0 20 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb =10v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =10v,i c =1ma 70 220 transition frequency f t v ce =10v,i e =1ma, f=200mhz 150 mhz common emitter reverse transfer capacitance cre v cb =10v,i c =1ma, f=10.7mhz 1.5 pf noise figure nf v cb =10v,i c =1ma, f=5mhz 4 db reverse transfer impedance z rb v cb =10v,i c =1ma, f=2mhz 50 ? classification of h fe (1) marking vb vc range 70-140 110-220 sot-323 1.base 2.emitter 3.collector 2SC3930 1 www.htsemi.com semiconductor jinyu
2SC3930 2 www.htsemi.com semiconductor jinyu
2SC3930 3 www.htsemi.com semiconductor jinyu
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